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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Peculiarities of Interstitial Carbon and Di-Carbon...

Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

785-790

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.785

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Online since:

November 1995

Authors:

R. Jones, Sven Öberg, P. Leary, V. Torres

Keywords:

Ab Initio Theory, Carbon Interstitial, Silicon, Vibrational Mode

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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