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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201A First-Priciples Study of Carbon Impurities in...

A First-Priciples Study of Carbon Impurities in GaAs and InAs

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

803-808

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.803

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Online since:

November 1995

Authors:

K.J. Chang, Sang Guk Lee, Byoung Ho Cheong

Keywords:

Carbon Impurity, Compensation, p-Type Doping

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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