Paper Titles

Generation of Deep Level by Nitrogen Diffusion in Si
p.797

A First-Priciples Study of Carbon Impurities in GaAs and InAs
p.803

Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations
p.809

Hydrogen Incorporation and Interaction with Impurities and Defects in Silicon Investigated by Photoluminescence Spectroscopy
p.817

A Hydrogen-Related Defect in Polycrystalline CVD Diamond
p.825

Dynamics of Hydrogen in Si and GaAs: Results from Muonium Experiments
p.831

Acceptor and Donor Neutralization by Hydrogen in Bulk 6H-SiC
p.837

Hydrogen States and Passivation in Silicon
p.843

Endor Identification of a Hydrogen-Passivated Thermal Donor
p.849

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201A Hydrogen-Related Defect in Polycrystalline CVD...

A Hydrogen-Related Defect in Polycrystalline CVD Diamond

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

825-830

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.825

Citation:

Cite this paper

Online since:

November 1995

Authors:

X. Zhou, G.D. Watkins, K.M. McNamara Rutledge

Keywords:

CVD Diamond, EPR, Grain Boundary, Hydrogen

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: