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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Dynamics of Hydrogen in Si and GaAs: Results from...

Dynamics of Hydrogen in Si and GaAs: Results from Muonium Experiments

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

831-836

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.831

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Online since:

November 1995

Authors:

R.L. Lichti, C. Schwab, T.L. Estle

Keywords:

Diffusion Mechanism, GaAs, Hydrogen, Muonium, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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