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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Acceptor and Donor Neutralization by Hydrogen in...

Acceptor and Donor Neutralization by Hydrogen in Bulk 6H-SiC

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

837-842

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.837

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Online since:

November 1995

Authors:

B. Clerjaud, F. Gendron, C. Porte, W. Wilkening

Keywords:

Hydrogen, Neutralization, Silicon Carbide (SiC)

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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