Paper Titles

Nonlinear Zeeman Behaviour of Copper Centers in ZnS and CdS
p.767

Electron Paramagnetic Resonance and Optical Studies of Vanadium-Doped ZnTe
p.773

The Titanium and Vanadium Donor in CdTe
p.779

Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si
p.785

The NNO Defect in Silicon
p.791

Generation of Deep Level by Nitrogen Diffusion in Si
p.797

A First-Priciples Study of Carbon Impurities in GaAs and InAs
p.803

Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations
p.809

Hydrogen Incorporation and Interaction with Impurities and Defects in Silicon Investigated by Photoluminescence Spectroscopy
p.817

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201The NNO Defect in Silicon

The NNO Defect in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

791-796

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.791

Citation:

Cite this paper

Online since:

November 1995

Authors:

F. Berg Rasmussen, Sven Öberg, R. Jones, C.P. Ewels, Jonathan P. Goss, J. Miró, Peter Deák

Keywords:

Ab Initio Theory, Infrared Absorption, Isotope Shift, NNO-Complex

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: