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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Paper Title Page

Charactrization of Residual Transition Metal Ions in GaN and AIN

Authors: J. Baur, Ulrich Kaufmann, M. Kunzer, J. Schneider, Hiroshi Amano, Isamu Akasaki, T. Detchprohm, K. Hiramatsu

55

Sn Mössbauer Study of Ion Implanted GaN

Authors: M. Fanciulli, M. Lindroos, G. Weyer, T.D. Moustakas

61

Ni Complexes in Diamond

Authors: Jonathan P. Goss, A. Resende, R. Jones, Sven Öberg, Patrick R. Briddon

67

Nickel and Nitrogen(?) Related Defects in High Pressure Synthetic Diamond

Authors: Maria Helena Nazaré, L.M. Rino, H. Kanda

73

Ni Related Centers in Synthetic Diamond

Authors: D.M. Hofmann, P. Christmann, D. Volm, Klaus Pressel, Luís Pereira, Leonel Santos, E. Pereira

79

Defect Control and Defect Engineering in Ion-Implanted Diamond

Authors: A.A. Gippius

85

Ga Bound Excitons in 6H-SiC

Authors: Anne Henry, Christer Hallin, Ivan G. Ivanov, Peder Bergman, Olof Kordina, Bo Monemar, Erik Janzén

91

Photoluminescence and Electron-Spin-Resonance Studies of Defects in Ion-Implanted Thermal SiO₂ Films

Authors: Hironobu Nishikawa, Hisao Fukui, Eiji Watanabe, D. Ito, M. Takiyama, A. Ieki, Y. Ohki

97

Theory of Interstitial Oxygen in Silicon and Germanium

Authors: E. Artacho, F. Yndurain

103

Impurity Behavior during Si Single Crystal Growth from the Melt

Authors: T. Izumi, H. Morita, T. Fujiwara, H. Fujiwara, S. Inami

109

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