Materials Science Forum Vols. 196-201

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https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Table of Contents

Paper Title Page

Lattice Sites of Li in Si and Ge

Authors: Ulrich Wahl, S.G. Jahn, M. Restle, H. Quintel, H. Hofsäss

115

Oscillator Strengths and Linewidths of Shallow Impurity Spectra in Si and Ge

Authors: Boris A. Andreev, E.B. Kozlov, T.M. Lifshits

121

Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As

Authors: K.M. Itoh, W. Walukiewicz, J.W. Beeman, Eugene E. Haller, Hyun Jung Kim, A.J. Mayur, M.D. Sciacca, A.K. Ramdas, Ryszard Buczko, J.W. Farmer, V.I. Ozhogin

127

Carbon Induced Inhomogeneous Strain Splitting of the Phosphorus Bound Exciton Line in Silicon

Authors: A.N. Safonov, Edward C. Lightowlers, Gordon Davies

133

Isoelectronic Bound-Multiexciton Systems in Thermally-Treated Czochralski Silicon

Authors: L. Jeyanathan, Edward C. Lightowlers, Gordon Davies

139

Excitons Bound to Isoelectronic C_3V-Defects B⁴₈₀ (1.1068 eV) in Silicon

Authors: A.S. Kaminskii, E.V. Lavrov

145

Defect Production and Annealing in Degenerate Silicon Irradiated with fast Electrons at Low Temperatures

Authors: Peter Ehrhart, Valentin V. Emtsev, D.S. Poloskin, Holger Zillgen

151

Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C

Authors: Y. Shi, Masashi Suezawa, Feng Mei Wu, M. Imai, Y.D. Zheng, Koji Sumino

157

Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions

Authors: Valentin V. Emtsev, D.S. Poloskin, Elena I. Shek, N.A. Sobolev

163

EPR and IR Absorption of Defects in Isotopically Enriched Germanium

Authors: Lyudmila I. Khirunenko, N.A. Tripachko, V.I. Shakhovtsov, V.I. Yashnik, V.V. Shumov

167