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HomeMaterials Science ForumMaterials Science Forum Vols. 185-188

Materials Science Forum Vols. 185-188

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.185-188

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Table of Contents

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Paper Title Page

A Summary of the Passivity Symposium

Authors: H.L. Hartnagel, W.J. Plieth

3

Fundamental Aspects of the Passivation of Metals and Semiconductors

Authors: K.E. Heusler

9

Passivation and Control of Semiconductor Interfaces by Interface Control Layers

Authors: Hisashi Hasegawa

23

A comparison of the Oxidation and Passivation of Si, Ge and InP

Authors: E.A. Irene

37

Laser Interferometry and SMX-Techniques for Thermal Characterization of Thin Films

Authors: E. Oesterschulze, L. Hadjiiski, M. Stopka, R. Kassing

43

Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy

Authors: T. Saitoh, Hisashi Hasegawa

53

Non-Steady State C-V Methods for Determination of Interface State Parameters

Authors: K.L. Temnikov, I.A. Uritskaya

59

Composition, Structure and Modification of Passivating Films on Semiconductors Deposited at Low Temperatures

Authors: Mikhail R. Baklanov, L.L. Vasilyeva

65

Passivity and electronic properties of the silicon/silicondioxide interface

Authors: H. Flietner

73

Electrochemical and Electronic Passivation by Hydrogenation of n-Si(111)

Authors: J. Rappich, H.J. Lewerenz

83

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