Fundamental Aspects of the Passivation of Metals and Semiconductors
p.9
p.9
Passivation and Control of Semiconductor Interfaces by Interface Control Layers
p.23
p.23
A comparison of the Oxidation and Passivation of Si, Ge and InP
p.37
p.37
Laser Interferometry and SMX-Techniques for Thermal Characterization of Thin Films
p.43
p.43
Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy
p.53
p.53
Non-Steady State C-V Methods for Determination of Interface State Parameters
p.59
p.59
Composition, Structure and Modification of Passivating Films on Semiconductors Deposited at Low Temperatures
p.65
p.65
Passivity and electronic properties of the silicon/silicondioxide interface
p.73
p.73
Electrochemical and Electronic Passivation by Hydrogenation of n-Si(111)
p.83
p.83
Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy
Abstract:
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Periodical:
Materials Science Forum (Volumes 185-188)
Pages:
53-58
Citation:
Online since:
March 1995
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© 1995 Trans Tech Publications Ltd. All Rights Reserved
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