Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy

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Periodical:

Materials Science Forum (Volumes 185-188)

Edited by:

K.E. Heusler

Pages:

53-58

DOI:

10.4028/www.scientific.net/MSF.185-188.53

Citation:

T. Saitoh and H. Hasegawa, "Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy", Materials Science Forum, Vols. 185-188, pp. 53-58, 1995

Online since:

March 1995

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$35.00

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