Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy
p.53
p.53
Non-Steady State C-V Methods for Determination of Interface State Parameters
p.59
p.59
Composition, Structure and Modification of Passivating Films on Semiconductors Deposited at Low Temperatures
p.65
p.65
Passivity and electronic properties of the silicon/silicondioxide interface
p.73
p.73
Electrochemical and Electronic Passivation by Hydrogenation of n-Si(111)
p.83
p.83
Influence of Tunneling on Trapping Kinetics in Thin Layers
p.91
p.91
On the Nature of the Radiation-Induced Failure of Si-SiO2 Structures Annealed in Hydrogen
p.99
p.99
Characteristics of Si-SiO2 Systems Obtained by Thermal Oxidation of Silicon Surface Covered with Silicon-Hydrogen Layers
p.105
p.105
Passivation and Depassivation of Electrically Active Centers in the Polysilicon-Oxide-Silicon Structures
p.109
p.109
Electrochemical and Electronic Passivation by Hydrogenation of n-Si(111)
Abstract:
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Periodical:
Materials Science Forum (Volumes 185-188)
Pages:
83-90
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Online since:
March 1995
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© 1995 Trans Tech Publications Ltd. All Rights Reserved
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