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HomeMaterials Science ForumMaterials Science Forum Vols. 185-188Influence of Tunneling on Trapping Kinetics in...

Influence of Tunneling on Trapping Kinetics in Thin Layers

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Passivation of Metals and Semiconductors

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Periodical:

Materials Science Forum (Volumes 185-188)

Pages:

91-98

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.185-188.91

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Online since:

March 1995

Authors:

S. Scharf, M. Schmidt, D. Bräunig

Keywords:

Hole Traps, Interface, Si/SiO₂, Trapping Kinetics, Tunneling

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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