Composition, Structure and Modification of Passivating Films on Semiconductors Deposited at Low Temperatures
p.65
p.65
Passivity and electronic properties of the silicon/silicondioxide interface
p.73
p.73
Electrochemical and Electronic Passivation by Hydrogenation of n-Si(111)
p.83
p.83
Influence of Tunneling on Trapping Kinetics in Thin Layers
p.91
p.91
On the Nature of the Radiation-Induced Failure of Si-SiO2 Structures Annealed in Hydrogen
p.99
p.99
Characteristics of Si-SiO2 Systems Obtained by Thermal Oxidation of Silicon Surface Covered with Silicon-Hydrogen Layers
p.105
p.105
Passivation and Depassivation of Electrically Active Centers in the Polysilicon-Oxide-Silicon Structures
p.109
p.109
Role of Electron / Hole Processes in the Initial Stage of Silicon Anodization
p.115
p.115
Effect of Structure of Hydrogenated SiNx:H Films on the Dissociation Mechanism of Si-H and N-H Bonds
p.119
p.119
On the Nature of the Radiation-Induced Failure of Si-SiO2 Structures Annealed in Hydrogen
Abstract:
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Periodical:
Materials Science Forum (Volumes 185-188)
Pages:
99-104
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Online since:
March 1995
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© 1995 Trans Tech Publications Ltd. All Rights Reserved
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