Effect of Structure of Hydrogenated SiNx:H Films on the Dissociation Mechanism of Si-H and N-H Bonds

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Periodical:

Materials Science Forum (Volumes 185-188)

Edited by:

K.E. Heusler

Pages:

119-128

DOI:

10.4028/www.scientific.net/MSF.185-188.119

Citation:

E.B. Gorokhov et al., "Effect of Structure of Hydrogenated SiNx:H Films on the Dissociation Mechanism of Si-H and N-H Bonds", Materials Science Forum, Vols. 185-188, pp. 119-128, 1995

Online since:

March 1995

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$35.00

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