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Characteristics of Si-SiO₂ Systems Obtained by Thermal Oxidation of Silicon Surface Covered with Silicon-Hydrogen Layers
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Passivation and Depassivation of Electrically Active Centers in the Polysilicon-Oxide-Silicon Structures
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Role of Electron / Hole Processes in the Initial Stage of Silicon Anodization
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Effect of Structure of Hydrogenated SiN_x:H Films on the Dissociation Mechanism of Si-H and N-H Bonds
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Stress Generation and Relaxation in Passivating Films and its New Application in Nanolitography
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High Resolution Surface Characterisation Using STM Light Emission Techniques
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Passivation of Semiconductors by the Remote Plasma Technique
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AES Study of the GaAs-Germanium Oxynitride Interface
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Passivation Studies of Se/GaAs Interface using X-Ray Photoelectron and Photoluminescence Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 185-188Stress Generation and Relaxation in Passivating...

Stress Generation and Relaxation in Passivating Films and its New Application in Nanolitography

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Passivation of Metals and Semiconductors

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Periodical:

Materials Science Forum (Volumes 185-188)

Pages:

129-144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.185-188.129

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Online since:

March 1995

Authors:

E.B. Gorokhov, A.G. Noskov, V.Ya. Prinz

Keywords:

Controllable Shrinkage, Crack Formation, CVD Glassy Films, PECVD Glassy Films, Self-Aligned Nanolitographic Mask, Viscosity

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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