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Characteristics of Si-SiO₂ Systems Obtained by Thermal Oxidation of Silicon Surface Covered with Silicon-Hydrogen Layers
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Passivation and Depassivation of Electrically Active Centers in the Polysilicon-Oxide-Silicon Structures
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Role of Electron / Hole Processes in the Initial Stage of Silicon Anodization
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Effect of Structure of Hydrogenated SiN_x:H Films on the Dissociation Mechanism of Si-H and N-H Bonds
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HomeMaterials Science ForumMaterials Science Forum Vols. 185-188Passivation and Depassivation of Electrically...

Passivation and Depassivation of Electrically Active Centers in the Polysilicon-Oxide-Silicon Structures

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Periodical:

Materials Science Forum (Volumes 185-188)

Pages:

109-114

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.185-188.109

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Online since:

March 1995

Authors:

I.A. Uritskaya, V.Y. Uritsky

Keywords:

C-V Measurement, Depassivation, Electrically Active Centers, High Electric Field Stress, Passivation, PolySi-Sio₂-Si Structure, Trap Density, Undoped Poly-Si Gate

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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