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HomeMaterials Science ForumMaterials Science Forum Vols. 185-188Characteristics of Si-SiO2 Systems Obtained by...

Characteristics of Si-SiO₂ Systems Obtained by Thermal Oxidation of Silicon Surface Covered with Silicon-Hydrogen Layers

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Passivation of Metals and Semiconductors

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Periodical:

Materials Science Forum (Volumes 185-188)

Pages:

105-108

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.185-188.105

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Online since:

March 1995

Authors:

V.Y. Uritsky, B.B. Loginov

Keywords:

Dissolution, Fixed Oxide Charge, Silicon Network, Silicon-Hydrogen Layer, Si-SiO₂ System, Sulphur Content, Thermal Oxidation

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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