Paper Titles

Role of Electron / Hole Processes in the Initial Stage of Silicon Anodization
p.115

Effect of Structure of Hydrogenated SiN_x:H Films on the Dissociation Mechanism of Si-H and N-H Bonds
p.119

Stress Generation and Relaxation in Passivating Films and its New Application in Nanolitography
p.129

High Resolution Surface Characterisation Using STM Light Emission Techniques
p.145

Passivation of Semiconductors by the Remote Plasma Technique
p.155

AES Study of the GaAs-Germanium Oxynitride Interface
p.165

Passivation Studies of Se/GaAs Interface using X-Ray Photoelectron and Photoluminescence Spectroscopy
p.171

Passivation of GaAs with Sulphur Surface Treatment and UVCVD Silicon Nitride Cap Layer
p.179

Silicon Nitride and Oxide Deposited by Direct Photolysis on Sulfur Treated GaAs and InP: Application to III-V Passivation
p.185

HomeMaterials Science ForumMaterials Science Forum Vols. 185-188Passivation of Semiconductors by the Remote Plasma...

Passivation of Semiconductors by the Remote Plasma Technique

Article Preview

Abstract:

You might also be interested in these eBooks

Passivation of Metals and Semiconductors

Info:

Periodical:

Materials Science Forum (Volumes 185-188)

Pages:

155-164

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.185-188.155

Citation:

Cite this paper

Online since:

March 1995

Authors:

Wilhelm Kulisch, F. Kiel, M. Schiller, S. Reinke, R. Kassing

Keywords:

III/V-Passivation, Intergrated Photoluminescene, Plasma Diagnostics, Remote Plasma Techniques, SiO₂ Deposition

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: