Passivation of GaAs with Sulphur Surface Treatment and UVCVD Silicon Nitride Cap Layer

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Periodical:

Materials Science Forum (Volumes 185-188)

Edited by:

K.E. Heusler

Pages:

179-184

DOI:

10.4028/www.scientific.net/MSF.185-188.179

Citation:

H. Sik et al., "Passivation of GaAs with Sulphur Surface Treatment and UVCVD Silicon Nitride Cap Layer", Materials Science Forum, Vols. 185-188, pp. 179-184, 1995

Online since:

March 1995

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$35.00

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