Paper Titles

Passivation Studies of Se/GaAs Interface using X-Ray Photoelectron and Photoluminescence Spectroscopy
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Passivation of GaAs with Sulphur Surface Treatment and UVCVD Silicon Nitride Cap Layer
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Silicon Nitride and Oxide Deposited by Direct Photolysis on Sulfur Treated GaAs and InP: Application to III-V Passivation
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Surface Passivation of III-V Compound Semiconductors with Chalcogen Atoms
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Passivation of InP for Optoelectronics
p.199

Formation of Oxide Films on HgCdTe after Fluorine-Consist Rinsing
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STM and AFM Studies of Passive Films
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Disorder and Structural Relaxation in Passive Films on Fe-Cr Alloys
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Atomic Structure and Mechanical Behaviour of Passive Film Formed on Stainless Steels
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HomeMaterials Science ForumMaterials Science Forum Vols. 185-188Passivation of InP for Optoelectronics

Passivation of InP for Optoelectronics

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Passivation of Metals and Semiconductors

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Periodical:

Materials Science Forum (Volumes 185-188)

Pages:

199-208

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.185-188.199

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Online since:

March 1995

Authors:

H. Kräutle

Keywords:

Dielectric, InP, Passivation, Techniques

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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