Silicon Nitride and Oxide Deposited by Direct Photolysis on Sulfur Treated GaAs and InP: Application to III-V Passivation

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Periodical:

Materials Science Forum (Volumes 185-188)

Edited by:

K.E. Heusler

Pages:

185-190

DOI:

10.4028/www.scientific.net/MSF.185-188.185

Citation:

N. Proust et al., "Silicon Nitride and Oxide Deposited by Direct Photolysis on Sulfur Treated GaAs and InP: Application to III-V Passivation ", Materials Science Forum, Vols. 185-188, pp. 185-190, 1995

Online since:

March 1995

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$35.00

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