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HomeMaterials Science ForumMaterials Science Forum Vols. 185-188Silicon Nitride and Oxide Deposited by Direct...

Silicon Nitride and Oxide Deposited by Direct Photolysis on Sulfur Treated GaAs and InP: Application to III-V Passivation

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Passivation of Metals and Semiconductors

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Periodical:

Materials Science Forum (Volumes 185-188)

Pages:

185-190

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.185-188.185

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Online since:

March 1995

Authors:

N. Proust, Gérard Guillot, M. Petitjean, M. Beguet, J.F. Chapeaublanc, J. Perrin

Keywords:

MIS Diodes, Passivation, Photoluminescence (PL), Silicon Oxide (SiO), Sulfur, UVCVD

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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