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HomeMaterials Science ForumMaterials Science Forum Vols. 185-188AES Study of the GaAs-Germanium Oxynitride...

AES Study of the GaAs-Germanium Oxynitride Interface

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Passivation of Metals and Semiconductors

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Periodical:

Materials Science Forum (Volumes 185-188)

Pages:

165-170

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.185-188.165

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Online since:

March 1995

Authors:

D. Jishiashvili, R. Dzhanelidze, Z. Shiolashvili, I. Nakhutsrishvili

Keywords:

AES, Film, GaAs, Germanium, Hydrazine, Interface, Oxynitride, Profile, Pyrolysis

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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