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Vols. 196-201
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Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

ToC:

Table of Contents

Paper Title Page

Acceptor Compensation in Nitrogen Doped Zinc Selenide
Authors: C.D. Song, Yu Hou Wu, Masashi Suezawa, F. Nishiyama, Hiroshi Katayama-Yoshida, Takeshi Yao
297
Nitrogen-Doping Efficiency in ZnSe and ZnTe
Authors: Byoung Ho Cheong, K.J. Chang
303
Doping of ZnSe, ZnTe, and CdTe with Group V Elements
Authors: Herbert Wolf, A. Burchard, Manfred Deicher, T. Filz, A. Jost, St. Lauer, R. Magerle, V. Ostheimer, Wulf Pfeiffer, Th. Wichert
309
Lattice Sites of Ion Implanted Li in Zn-Rich ZnSe
Authors: S.G. Jahn, Ulrich Wahl, M. Restle, H. Quintel, H. Hofsäss, M. Wienecke, I. Trojahn
315
Intrinsic Defects in ZnSe, ZnTe, and CdS Doped with Li
Authors: Herbert Wolf, A. Jost, R. Lermen, T. Filz, V. Ostheimer, Th. Wichert
321
The Electronic Structure of Deep Donors and the Nature of the Anion Vacancy in II-VI Compound Semiconductors
Authors: M. Illgner, Harald Overhof
327
Studies of Defects in Electron and Proton Irradiated ZnO by Positron Annihilation
Authors: Werner Puff, S. Brunner, Peter Mascher, Adam G. Balogh
333
Photoluminescence of Bulk Si-Ge Single Crystals
Authors: T. Honda, Masashi Suezawa, Koji Sumino
339
Dopant Diffusion in Strained and Relaxed Si1-xGex
Authors: A.D.N. Paine, Masami Morooka, Arthur F.W. Willoughby, Janet M. Bonar, P. Phillips, M.G. Dowsett, G. Cooke
345
In Situ Phosphorus Doping of Si and Si1-xGex Epitaxial Layers by RTP/VLP-CVD
Authors: Xiao Dong Huang, Ping Han, Yi Shi, You Dou Zheng, Li Qun Hu, Rong Hua Wang, Shun Ming Zhu
349

Showing 51 to 60 of 336 Paper Titles

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