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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Paper Title Page

Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures

Authors: W.M. Chen, I.A. Buyanova, Anne Henry, W.X. Ni, G.V. Hansson, Bo Monemar

473

Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers

Authors: I.A. Buyanova, W.M. Chen, Anne Henry, W.X. Ni, G.V. Hansson, Bo Monemar

479

Profiling the Deep Levels inSiGe/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy

Authors: Rong Zhang, Kai Yang, Guoyi Qing, Yi Shi, Shu Lin Gu, Rong Hua Wang, Li Qun Hu, Weizhong Gao, You Dou Zheng

485

Multiphonon Carrier Emission and Capture by Defects in Nanostructures

Authors: I.N. Yassievich, A.A. Pakhomov

491

Adsorption of Antimony on Si(113) Surfaces: Ab-Initio Calculations and STM Investigations

Authors: Jaroslaw Dąbrowski, Hans Joachim Müssig, G. Wolff, Waleran Arabczyk, S. Hinrich

497

Enhanced Impurity Solubility and Diffusion Near Surfaces

Authors: J. Tersoff

503

A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy

Authors: T. Walther, Colin J. Humphreys, A.G. Cullis, D.J. Robbins

505

Si/Ge Ordered Interface: Structure and Formation Mechanism

Authors: N. Ikarashi, Katsuhiro Akimoto, Atsushi Oshiyama, Tetsuo Tatsumi

511

Spin Dependent Recombination and EPR of Surface Paramagnetic Centers in Crystalline and Porous Silicon

Authors: R. Laiho, L.S. Vlasenko, M.P. Vlasenko

517

Variation of 2DEG-Properties on Hetrointerface Caused by the Surface Defects Recharging

Authors: A.M. Kreshchuk, G.D. Kipshidze, S.V. Novikov, I.G. Savel'ev, A.Ya. Shik

523