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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Paper Title Page

Erbium in Silicon: A Defect System for Optoelectronic Intergrated Ciricuits

Authors: Jürgen Michel, J. Palm, F.X. Gan, F.Y.G. Ren, B. Zheng, S.T. Dunham, Lionel C. Kimerling

585

Excitation of Rare Earths in Semiconductors by the Excitonic Auger Recombination

Authors: I. Tsimperidis, T. Gregorkiewicz, C.A.J. Ammerlaan

591

Optical and Electrical Properties of Si:Er Light-Emitting Structures

Authors: N.A. Sobolev, O.V. Alexandrov, M.S. Bresler, Oleg B. Gusev, Elena I. Shek, M.I. Makovijchuk, E.O. Parshin

597

Light Emission from Er-Implanted Silicon Using Anodization

Authors: S. Uekusa, M. Yoshida, K. Shimazu, A. Majima, K. Yabuta

603

Erbium Related Centers in CZ-Silicon

Authors: W. Jantsch, Hanka Przybylinska, Yu. Suprun-Belevich, M. Stepikhova, G. Hendorfer, L. Palmetshofer

609

Electrically Active Centers in Silicon Doped with Erbium

Authors: Valentin V. Emtsev, O.V. Alexandrov, D.S. Poloskin, Elena I. Shek, N.A. Sobolev

615

Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source

Authors: Y. Fujiwara, Yoshiaki Ito, Y. Nonogaki, N. Matsubara, K. Fujita, Yoshikazu Takeda

621

Total Energy Calculation for Er Impurity in GaAs

Authors: Akihito Taguchi, Takahisa Ohno

627

Estimation of Rare-Earth Energy Levels in the Bandgap of Semiconductors

Authors: Akihito Taguchi, Kenichiro Takahei

633

Characteristics of Er-Oxygen Complex Centers in GaAs

Authors: Kenichiro Takahei, Yoshiji Horikoshi, Akihito Taguchi

639