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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Estimation of Rare-Earth Energy Levels in the...

Estimation of Rare-Earth Energy Levels in the Bandgap of Semiconductors

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

633-638

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.633

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Online since:

November 1995

Authors:

Akihito Taguchi, Kenichiro Takahei

Keywords:

Energy Transfer, Impurity Levels, Rare Earth (RE), Semiconductor

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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