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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201The Importance of Auger Effect on the Efficiency...

The Importance of Auger Effect on the Efficiency of Er-Related Luminescence in InP:Er

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

657-662

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.657

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Online since:

November 1995

Authors:

X.Z. Wang, Bruce W. Wessels

Keywords:

InP, Photoluminescence (PL), Rare Earth Doping

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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