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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Characteristics of Er-Oxygen Complex Centers in...

Characteristics of Er-Oxygen Complex Centers in GaAs

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

639-644

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.639

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Online since:

November 1995

Authors:

Kenichiro Takahei, Yoshiji Horikoshi, Akihito Taguchi

Keywords:

Epitaxy, Erbium, GaAs, Isotope, Oxygen, Photoluminescence (PL), SIMS, Vicinal Plane

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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