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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Investigation of Er-Related Centers in Doped GaP

Investigation of Er-Related Centers in Doped GaP

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

663-668

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.663

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Online since:

November 1995

Authors:

X.Z. Wang, Bruce W. Wessels

Keywords:

GaP, Photocapacitance, Rare Earth Doping

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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