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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Pressure-Induced Increase of the Intra-4f...

Pressure-Induced Increase of the Intra-4f Luminescence of GaAs:Er,O at Room Temperature

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

645-650

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.645

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Online since:

November 1995

Authors:

K. Takarabe, T. Mizushima, S. Minomura, Akihito Taguchi, Kenichiro Takahei

Keywords:

Erbium, GaAs, Hydrostatic Pressure, Luminescence, Oxygen

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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