Paper Titles

Optical and Electrical Properties of Si:Er Light-Emitting Structures
p.597

Light Emission from Er-Implanted Silicon Using Anodization
p.603

Erbium Related Centers in CZ-Silicon
p.609

Electrically Active Centers in Silicon Doped with Erbium
p.615

Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source
p.621

Total Energy Calculation for Er Impurity in GaAs
p.627

Estimation of Rare-Earth Energy Levels in the Bandgap of Semiconductors
p.633

Characteristics of Er-Oxygen Complex Centers in GaAs
p.639

Pressure-Induced Increase of the Intra-4f Luminescence of GaAs:Er,O at Room Temperature
p.645

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Erbium Doping to P-Based III-V Semiconductors by...

Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

621-626

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.621

Citation:

Cite this paper

Online since:

November 1995

Authors:

Y. Fujiwara, Yoshiaki Ito, Y. Nonogaki, N. Matsubara, K. Fujita, Yoshikazu Takeda

Keywords:

Erbium, Organometallic Vapor Phase Epitaxy, Photoluminescence (PL), Secondary Ion Mass Spectroscopy (SIMS), Tertiarybutylphosphine

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: