Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

621-626

DOI:

10.4028/www.scientific.net/MSF.196-201.621

Citation:

Y. Fujiwara et al., "Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source", Materials Science Forum, Vols. 196-201, pp. 621-626, 1995

Online since:

November 1995

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$35.00

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