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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Light Emission from Er-Implanted Silicon Using...

Light Emission from Er-Implanted Silicon Using Anodization

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

603-608

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.603

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Online since:

November 1995

Authors:

S. Uekusa, M. Yoshida, K. Shimazu, A. Majima, K. Yabuta

Keywords:

Anodization, Er-Implanted Si (Si:Er), Light Elements, Oxidation, Photoluminescence (PL)

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Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

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