Paper Titles

Erbium in Silicon: A Defect System for Optoelectronic Intergrated Ciricuits
p.585

Excitation of Rare Earths in Semiconductors by the Excitonic Auger Recombination
p.591

Optical and Electrical Properties of Si:Er Light-Emitting Structures
p.597

Light Emission from Er-Implanted Silicon Using Anodization
p.603

Erbium Related Centers in CZ-Silicon
p.609

Electrically Active Centers in Silicon Doped with Erbium
p.615

Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source
p.621

Total Energy Calculation for Er Impurity in GaAs
p.627

Estimation of Rare-Earth Energy Levels in the Bandgap of Semiconductors
p.633

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Erbium Related Centers in CZ-Silicon

Erbium Related Centers in CZ-Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

609-614

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.609

Citation:

Cite this paper

Online since:

November 1995

Authors:

W. Jantsch, Hanka Przybylinska, Yu. Suprun-Belevich, M. Stepikhova, G. Hendorfer, L. Palmetshofer

Keywords:

Deep Levels Due to Er Complexes in Si, Optically Active Er-Complexes in Si

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: