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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Excitation of Rare Earths in Semiconductors by the...

Excitation of Rare Earths in Semiconductors by the Excitonic Auger Recombination

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

591-596

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.591

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Online since:

November 1995

Authors:

I. Tsimperidis, T. Gregorkiewicz, C.A.J. Ammerlaan

Keywords:

InP:Yb, Isoelectronic Bound Exciton, ODMII, Rare Earth (RE), Si:Er

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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