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Vols. 196-201
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Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

ToC:

Table of Contents

Paper Title Page

Stucture of the Pb Center: Endor Investigation
Authors: V.Ya. Bratus, S.S. Ishchenko, S.M. Okulov, I.P. Vorona, Hans Jürgen von Bardeleben
529
High Quality GaAs on Si Grown by CBE
Authors: H. Uchida, M. Adachi, Takashi Egawa, Hironobu Nishikawa, Takashi Jimbo, Masayoshi Umeno
535
Control of Defects in GaAs/GaInP Interface Grown by MOVPE
Authors: Takayuki Arai, Kazuo Uchida, Hiroki Tokunaga, Koh Matsumoto
539
Ab Initio Study of Cl Impurity at GaAs Surfaces
Authors: Takahisa Ohno, Taizo Sasaki
543
Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim
Authors: J.-L. Farvacque, Z. Bougrioua, D. Ferré
549
High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface
Authors: Masanori Shinohara, Haruki Yokoyama, Naohisa Inoue
555
Strain Characterization of Hg1-xFexSe-Layers by Electron Spin Resonance
Authors: G. Hendorfer, W. Jantsch, W. Helzel, J.H. Li, Zbysław Wilamowski, T. Widmer, D. Schikora, K. Lischka
561
Photoreflectance, Reflectivity and Photoluminescence of MOVPE Grown ZnSe/GaAs Epilayers and ZnSeS/ZnSe Superlattices
Authors: C. Boemare, Maria Helena Nazaré, W. Taudt, J. Söllner, M. Heuken
567
Photoinduced Defects in CdS-Doped Glasses
Authors: Tadaki Miyoshi, Ken-Ichi Towata, Hirobumi Matsuki, Naoto Matsuo, Teruhisa Kaneda
573
Electronic Structure of Erbium Centers in Silicon
Authors: F.X. Gan, Lucy V.C. Assali, Lionel C. Kimerling
579

Showing 91 to 100 of 336 Paper Titles

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