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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201High Quality GaAs on Si Grown by CBE

High Quality GaAs on Si Grown by CBE

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Abstract:

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

535-538

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.535

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Online since:

November 1995

Authors:

H. Uchida, M. Adachi, Takashi Egawa, Hironobu Nishikawa, Takashi Jimbo, Masayoshi Umeno

Keywords:

CBE, GaAs on Si, Heteroepitaxy, MOCVD

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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