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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Control of Defects in GaAs/GaInP Interface Grown...

Control of Defects in GaAs/GaInP Interface Grown by MOVPE

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

539-542

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.539

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Online since:

November 1995

Authors:

Takayuki Arai, Kazuo Uchida, Hiroki Tokunaga, Koh Matsumoto

Keywords:

Deep Emission, Defect Models, GaInP/GaAs Interface, GaP, MOVPE, PL, QW, TRPL

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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