High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

555-560

DOI:

10.4028/www.scientific.net/MSF.196-201.555

Citation:

M. Shinohara et al., "High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface", Materials Science Forum, Vols. 196-201, pp. 555-560, 1995

Online since:

November 1995

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