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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201High-Performance Al(Ga)As/GaAs Resonant Tunneling...

High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

555-560

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.555

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Online since:

November 1995

Authors:

Masanori Shinohara, Haruki Yokoyama, Naohisa Inoue

Keywords:

AlAs, AlGaAs, GaAs, Interface Roughness, MOVPE, Resonant Tunneling Diodes

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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