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Vols. 196-201
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Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

ToC:

Table of Contents

Paper Title Page

Nonlinear Zeeman Behaviour of Copper Centers in ZnS and CdS
Authors: T. Telahun, P. Thurian, Andreas Hoffmann, I. Broser, Udo Scherz
767
Electron Paramagnetic Resonance and Optical Studies of Vanadium-Doped ZnTe
Authors: J. Kreissl, K. Irmscher, P. Peka, M.U. Lehr, H.-J. Schulz, U.W. Pohl
773
The Titanium and Vanadium Donor in CdTe
Authors: P. Christmann, J. Kreissl, D. Hofmann, B.K. Meyer, R. Schwarz, K.W. Benz
779
Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si
Authors: R. Jones, Sven Öberg, P. Leary, V. Torres
785
The NNO Defect in Silicon
Authors: F. Berg Rasmussen, Sven Öberg, R. Jones, C.P. Ewels, Jonathan P. Goss, J. Miró, Peter Deák
791
Generation of Deep Level by Nitrogen Diffusion in Si
Authors: N. Fuma, K. Tashiro, K. Kakumoto, Y. Takano
797
A First-Priciples Study of Carbon Impurities in GaAs and InAs
Authors: K.J. Chang, Sang Guk Lee, Byoung Ho Cheong
803
Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations
Authors: Michael Stavola, J.-F. Zheng, Y.M. Cheng, C.R. Abernathy, Stephen J. Pearton
809
Hydrogen Incorporation and Interaction with Impurities and Defects in Silicon Investigated by Photoluminescence Spectroscopy
Authors: Edward C. Lightowlers
817
A Hydrogen-Related Defect in Polycrystalline CVD Diamond
Authors: X. Zhou, G.D. Watkins, K.M. McNamara Rutledge
825

Showing 131 to 140 of 336 Paper Titles

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