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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Paper Title Page

Calculations of the Neutral and Charged States of the {H,C} Pair in Silicon

Authors: Y. Zhou, R. Luchsinger, P.F. Meier, H.U. Suter, Djordje M. Maric, S.K. Estreicher

891

Structural and Electronic Properties of Carbon-Hydrogen Complex in Silicon

Authors: Chioko Kaneta, Hiroshi Katayama-Yoshida

897

Stability and Defect Reaction of Two Hydrogen-Carbon Complexes in Silicon

Authors: Y. Kamiura, M. Tsutsue, Makoto Hayashi, Y. Yamashita, Fumio Hashimoto

903

Carbon-Hydrogen Deep Level Luminescence Centre in Silicon Responsible for the T-Line

Authors: A.N. Safonov, Edward C. Lightowlers, Gordon Davies

909

Optical Absorption due to Vibration of Hydrogen-Oxygen Pairs in Silicon

Authors: V.P. Markevich, Masashi Suezawa, Koji Sumino

915

Theory of the NiH₂ Complex in Si and the CuH₂ Complex in GaAs

Authors: R. Jones, Jonathan P. Goss, Sven Öberg, Patrick R. Briddon, A. Resende

921

Hydrogen Induced Defects in Cobalt Doped Silicon

Authors: W. Jost, Joerg Weber, H. Lemke

927

H Interacting with Intrinsic Defects in Si

Authors: B. Bech Nielsen, L. Hoffmann, M. Budde, R. Jones, Jonathan P. Goss, Sven Öberg

933

Formation of Hydrogen-Oxygen-Vacancy Complexes in Silicon

Authors: Hirotoshi Hatakeyama, Masashi Suezawa, V.P. Markevich, Koji Sumino

939

Metastability and Negative-U Properties for Hydrogen-Related Radiation-Induced Defect in Silicon

Authors: V.P. Markevich, I.F. Medvedeva, L.I. Murin, Takashi Sekiguchi, Masashi Suezawa, Koji Sumino

945