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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Formation of Hydrogen-Oxygen-Vacancy Complexes in...

Formation of Hydrogen-Oxygen-Vacancy Complexes in Silicon

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

939-944

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.939

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Online since:

November 1995

Authors:

Hirotoshi Hatakeyama, Masashi Suezawa, V.P. Markevich, Koji Sumino

Keywords:

Hydrogen, Oxygen, Shallow Donors, Silicon, Vacancy

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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