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Metastability and Negative-U Properties for Hydrogen-Related Radiation-Induced Defect in Silicon
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Interstitial Hydrogen and the Dissociation of C-H Defects in GaAs
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Hydrogen Induced Degradation in Heavily Carbon-Doped GaAs Diodes
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Acceptor-Hydrogen Complexes in InAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Interstitial Hydrogen and the Dissociation of C-H...

Interstitial Hydrogen and the Dissociation of C-H Defects in GaAs

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

951-956

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.951

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Online since:

November 1995

Authors:

S.J. Breuer, R. Jones, Sven Öberg, Patrick R. Briddon

Keywords:

Ab Initio Theory, C-H, Dissociation, GaAs, Interstitial Hydrogen

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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