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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Vacancy- and Acceptor- H Complxes in Inp

Vacancy- and Acceptor- H Complxes in Inp

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

969-974

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.969

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Online since:

November 1995

Authors:

C.P. Ewels, Sven Öberg, R. Jones, B. Pajot, Patrick R. Briddon

Keywords:

Ab Initio Theory, Beryllium, Defect, Donor, Hydrogen, InP, Vacancy

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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