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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201H Interacting with Intrinsic Defects in Si

H Interacting with Intrinsic Defects in Si

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

933-938

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.933

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Online since:

November 1995

Authors:

B. Bech Nielsen, L. Hoffmann, M. Budde, R. Jones, Jonathan P. Goss, Sven Öberg

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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