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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Carbon-Hydrogen Deep Level Luminescence Centre in...

Carbon-Hydrogen Deep Level Luminescence Centre in Silicon Responsible for the T-Line

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

909-914

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.909

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Online since:

November 1995

Authors:

A.N. Safonov, Edward C. Lightowlers, Gordon Davies

Keywords:

Carbon, Hydrogen, Photoluminescence (PL), Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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