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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Structural and Electronic Properties of...

Structural and Electronic Properties of Carbon-Hydrogen Complex in Silicon

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

897-902

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.897

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Online since:

November 1995

Authors:

Chioko Kaneta, Hiroshi Katayama-Yoshida

Keywords:

Carbon, Complex, Hydrogen, Impurity, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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