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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Paper Title Page

Local Structure of the DX Center in AlGaAs: Results from Positron Spectroscopy

Authors: T. Laine, J. Mäkinen, Kimmo Saarinen, Pekka J. Hautojärvi, C. Corbel, Pierre Gibart

1073

Direct Experimental Evidence of Autolocalization Nature of DX-Centers

Authors: S.D. Ganichev, I.N. Yassievich, W. Prettl, J. Diener, B.K. Meyer, K.W. Benz

1079

Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped Al_xGa_1-xAs

Authors: M.V.B. Pinheiro, Matthias Linde, Hiroshi Ohkura, Johann Martin Spaeth

1085

Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs

Authors: P. Kaczor, Z.R. Żytkiewicz, L. Dobaczewski

1091

A Bistable Defect in Si-Doped Al_0.3Ga_0.7As

Authors: M.M. Sobolev, I.V. Kochnev, M.I. Papentsev, V.S. Kalinovsky

1097

Use of Bistable Centers in CdF₂ in Holographic Recording

Authors: B. Koziarska, Jerzy M. Langer, Alexandr I. Ryskin, A.S. Shcheulin, A. Suchocki

1103

Structural Study of Degraded II-VI Blue-Light Emitters

Authors: S. Tomiya, M. Ukita, Hideo Okuyama, K. Nakano, S. Itoh, Akira Ishibashi, E. Morita, Masahiko Ikeda

1109

Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments

Authors: G. Weyer, M. Fanciulli, Kristian Freitag, Arne Nylandsted-Larsen, M. Lindroos, E. Müller, H.C. Vestergaard

1117

Analysis of the Recombination-Active Region Around Extended Defects in Silicon

Authors: Martin Kittler, Winfried Seifert

1123

Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon

Authors: K. Terashima, T. Ikarashi, Haruhiko Ono, Michio Tajima

1129