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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Paper Title Page

Positron Lifetime in Si Multivacancies

Authors: Mineo Saito, Atsushi Oshiyama

1135

Frenkel Defects in Low Temperature e^-- Irradiated Ge and Si Investigated by X-Ray Diffraction

Authors: St. Bausch, Holger Zillgen, Peter Ehrhart

1141

On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.

Authors: M.-A. Trauwaert, Jan Vanhellemont, H.E. Maes, A.-M. Van Bavel, G. Langouche, Andre Stesmans, Paul Clauws

1147

Defects in NTD MCZ Si Doped with Magnesium

Authors: T.M. Tkacheva, G.N. Petrov, E.P. Shabalin, V.G. Golubev, G.I. Kropotov, Elena I. Shek, N.A. Sobolev

1153

Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombarded Silicon

Authors: H. Amekura, N. Kishimoto, K. Kono, T. Saito

1159

Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy

Authors: Masanori Fujinami, S. Hayashi

1165

Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy

Authors: Shunsuke Muto, Seiji Takeda, Mitsuji Hirata

1171

A Positron Lifetime Study of Defects in Plastically Deformed Silicon

Authors: Atsuo Kawasuso, Masashi Suezawa, Mitsuru Hasegawa, S. Yamaguchi, Koji Sumino

1177

Increase of Electrical Activity of Dislocations in Si during Plastic Deformation

Authors: O.V. Kononchuk, V. Orlov, Olga V. Feklisova, Eugene B. Yakimov, Nikolai Yarykin

1183

Electronic States Associated with Straight Dislocations in P-Type SiliconStudied by Means of Electric-Dipole Spin Resonance

Authors: Vitaly V. Kveder, Takashi Sekiguchi, Koji Sumino

1189