Paper Titles

Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy
p.1165

Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy
p.1171

A Positron Lifetime Study of Defects in Plastically Deformed Silicon
p.1177

Increase of Electrical Activity of Dislocations in Si during Plastic Deformation
p.1183

Electronic States Associated with Straight Dislocations in P-Type SiliconStudied by Means of Electric-Dipole Spin Resonance
p.1189

Energy States of Deformation-Induced Dislocations in Silicon Crystals
p.1195

Cathodoluminescence Study on Dislocation-Related Luminescence in Silicon
p.1201

Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon
p.1207

Effect of Transition Metal Impurities on the Photoluminescence of Deformed Si Crystal
p.1213

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Electronic States Associated with Straight...

Electronic States Associated with Straight Dislocations in P-Type SiliconStudied by Means of Electric-Dipole Spin Resonance

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1189-1194

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1189

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Online since:

November 1995

Authors:

Vitaly V. Kveder, Takashi Sekiguchi, Koji Sumino

Keywords:

Extended Defects, One-Dimensional Energy Band, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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