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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Increase of Electrical Activity of Dislocations in...

Increase of Electrical Activity of Dislocations in Si during Plastic Deformation

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1183-1188

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1183

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Online since:

November 1995

Authors:

O.V. Kononchuk, V. Orlov, Olga V. Feklisova, Eugene B. Yakimov, Nikolai Yarykin

Keywords:

Dislocation, DLTS, Plastic Deformation, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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